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| PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA 3N50P IXTP 3N50P IXTY 3N50P RDS(on) VDSS ID25 = 500 V = 3.6 A 2.0 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Maximum Ratings 500 V 500 V 30 40 V V A A A mJ mJ V/ns W C C C C C TO-220 (IXTP) G TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 20 TC = 25 C 3.6 8 3 10 180 10 70 -55 ... +150 150 -55 ... +150 DS (TAB) TO-263 (IXTA) G S (TAB) TO-252 (IXTY) G S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-220 TO-263 TO-252 (TO-220) 300 260 1.13/10 Nm/lb.in. 4 3 0.8 g g g Features l l Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 50A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C Characteristic Values Min. Typ. Max. 500 3.0 5.5 100 5 50 2.0 V V nA A A l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2006 IXYS All rights reserved DS99200E(12/05) IXTA 3N50P IXTP 3N50P IXTY 3N50P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 2.5 3.5 409 VGS = 0 V, VDS = 25 V, f = 1 MHz 48 6.1 15 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 20 (External) 15 38 12 9.3 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 3.3 3.4 S pF pF pF ns ns ns ns nC nC nC 1.8 C/W (TO-220) 0.25 C/W TO-263 (IXTA) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS= 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 3 5 1.5 400 A A V ns TO-220 (IXTP) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 3 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V TO-252 AA (IXTY) Outline Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. 2.19 0.89 0 0.64 0.76 5.21 0.46 0.46 5.97 4.32 6.35 4.32 2.38 1.14 0.13 0.89 1.14 5.46 0.58 0.58 6.22 5.21 6.73 5.21 Inches Min. 0.086 0.035 0 0.025 0.030 0.205 0.018 0.018 0.235 0.170 0.250 0.170 Max. 0.094 0.045 0.005 0.035 0.045 0.215 0.023 0.023 0.245 0.205 0.265 0.205 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 0.89 2.54 1.02 1.27 2.92 0.090 BSC 0.180 BSC 0.370 0.020 0.025 0.035 0.100 0.410 0.040 0.040 0.050 0.115 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTA 3N50P IXTP 3N50P IXTY 3N50P Fig. 1. Output Char acte r is tics @ 25C 3 2.7 2.4 2.1 V GS = 10V 8V 7V 8 7 6 V GS = 10V 8V Fig. 2. Exte nde d Output Char acte r is tics @ 25C I D - Amperes 1.8 1.5 1.2 0.9 0.6 0.3 0 0 1 2 3 4 5 6 6V I D - Amperes 5 4 3 2 1 0 0 3 6 9 12 15 7V 6V 18 21 24 27 30 V D S - V olts Fig. 3. Output Char acte r is tics @ 125C 3 2.7 2.4 V GS = 10V 8V 7V V D S - V olts Fig. 4. RD S(on ) Nor m aliz e d to 0.5 ID 25 V alue vs . Junction Te m pe r atur e 2.50 2.25 V GS = 10V R D S ( o n ) - Normalized 2.00 1.75 1.50 1.25 1.00 0.75 0.50 I D = 1.5A I D = 3A I D - Amperes 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 0 2 4 6 8 10 12 5V 6V -50 -25 0 25 50 75 100 125 150 V D S - V olts Fig. 5. RD S(on) Nor m aliz e d to 0.5 ID 25 V alue vs . ID 3.2 V GS = 10V 2.8 TJ - Degrees Centigrade Fig. 6. Dr ain Curr e nt vs . Cas e Te m pe r ature 3.5 3.0 TJ = 125 C R D S ( o n ) - Normalized I D - Amperes TJ = 25 C 0 1 2 3 4 5 6 7 8 2.4 2.5 2.0 1.5 1.0 2.0 1.6 1.2 0.5 0.0 0.8 I D - A mperes (c) 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXTA 3N50P IXTP 3N50P IXTY 3N50P Fig. 7. Input Adm ittance 6 Fig. 8. Trans conductance 8 7 6 TJ = -40 C 25 C 125 C 5 4 TJ = 125 C 25 C 2 -40 C g f s - Siemens 6 6.5 7 I D - Amperes 5 4 3 2 3 1 0 4.5 5 5.5 1 0 V G S - V olts Fig. 9. Sou r ce Cu r r e nt vs . Sour ce -To-Dr ain V oltage 9 8 7 0 1 2 3 4 5 6 I D - Amperes Fig. 10. Gate Char ge 10 9 8 7 V D S = 250V I D = 1.5A I G = 10m A I S - Amperes 6 V G S - Volts TJ = 25 C 6 5 4 3 2 1 0 5 4 3 2 1 0 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 TJ = 125 C 0 1 2 3 4 G 5 6 7 8 9 10 V S D - V olts Q - nanoCoulombs Fig. 11. Capacitance 1000 10 Fig. 12. For w ar d-Bias Safe Ope r ating Ar e a R D S(on) Lim it Capacitance - picoFarads C is s 25s I D - Amperes 100 100s 1 1m s DC 10m s C os s 10 C rs f = 1MH z 1 0 5 10 15 20 25 30 35 40 TJ = 150C TC = 25C 0.1 10 100 1000 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. V D S - V olts IXTA 3N50P IXTP 3N50P IXTY 3N50P Fig. 13. Maximum Transient Thermal Resistance 10.0 R( t h ) J C - C / W 1.0 0.1 0.1 1 10 100 1000 P ulse Width - m illiseconds (c) 2006 IXYS All rights reserved |
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